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september 2009 doc id 8370 rev 4 1/17 17 stp4nm60 std3nm60, std3nm60-1 n-channel 600 v, 1.3 ? , 3 a to-220, dpak, ipak zener-protected mdmesh? power mosfet features high dv/dt and avalanche capabilities improved esd capability low input capacitance and gate charge low gate input resistance tight process control and high manufacturing yields applications switching description modems technology applies the benefits of the multiple drain process to stmicroelectronics' well- known powermesh? horizontal layout structure. the resulting product offers low on-resistance, high dv/dt capability and excellent avalanche characteristics. figure 1. internal schematic diagram type v dss (@t jmax ) r ds(on) max i d p w std3nm60 650 < 1.5 ? 3 a 42 w std3nm60-1 stp4nm60 4 a 69 w 1 2 3 1 3 3 2 1 to-220 ipak dpak table 1. device summary order code marking package packing std3nm60 d3nm60 dpak tape and reel std3nm60-1 d3nm60 ipak tube stp4nm60 p4nm60 to-220 tube www.st.com obsolete product(s) - obsolete product(s)
contents std3nm60, std3nm60-1, stp4nm60 2/17 doc id 8370 rev 4 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 obsolete product(s) - obsolete product(s)
std3nm60, std3nm60-1, st p4nm60 electrical ratings doc id 8370 rev 4 3/17 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit stp4nm60 std3nm60 std3nm60-1 v ds drain-source voltage (v gs = 0) 600 v v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25c 4 3 a i d drain current (continuous) at t c = 100c 2.52 1.9 a i dm (1) 1. pulse width limited by safe operating area drain current (pulsed) 16 12 a p tot total dissipation at t c = 25c 69 42 w derating factor 0.55 0.33 w/c dv/dt (2) 2. i sd 3 a, di/dt 400 a, v dd v (br)dss , tj t jmax . peak diode recovery voltage slope 15 v/ns t j operating junction temperature -65 to 150 c t stg storage temperature c table 3. thermal data symbol parameter value unit to-220 dpak / ipak rthj-case thermal resistance junction-case max 1.82 3 c/w rthj-amb thermal resistance ju nction-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t jmax ) 1.5 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 200 mj obsolete product(s) - obsolete product(s)
electrical characteristics std3nm60, std3nm60-1, stp4nm60 4/17 doc id 8370 rev 4 2 electrical characteristics (t case = 25 c unless otherwise specified) table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs =0 600 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c = 125c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 20v 5 a v gs(th) gate threshold voltage v ds = v gs , i d = 250a 3 4 5 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 1.5 a 1.3 1.5 ? table 6. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. forward transconductance v ds = 15 v , i d = 1.5 a - 2.7 - s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v, f = 1 mhz, v gs = 0 - 324 132 7.4 - pf pf pf t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 300 v, i d = 1.5 a r g =4.7 ? v gs = 10 v (see figure 15 ) - 9 4 16.5 10.5 - ns ns ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 480 v, i d = 3 a, v gs = 10v (see figure 21 ) - 10 3 4.7 14 nc nc nc obsolete product(s) - obsolete product(s)
std3nm60, std3nm60-1, stp4nm60 electrical characteristics doc id 8370 rev 4 5/17 table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area. source-drain current source-drain current (pulsed) - 3 12 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5 % forward on voltage i sd = 3 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 3 a, di/dt = 100 a/s, v dd = 100 v, t j = 25c (see figure 17 ) - 224 1 9 ns nc a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 3 a, di/dt = 100 a/s, v dd = 100 v, t j = 150c (see figure 17 ) - 296 1.4 9.3 ns c a table 8. gate-source zener diode (1) 1. the built-in back-to-back zener diodes have specif ically been designed to enhanc e not only the device?s esd capability, but also to make th em safely absorb possible voltage tr ansients that may occasionally be applied from gate to source. in this respect the zener voltage is appropriate to achieve an efficient and cost-effective intervention to protec t the device?s integrity. these int egrated zener diodes thus avoid the usage of external components. symbol parameter test conditions min. typ. max. unit bv gso gate-source breakdown voltage i gs = 1ma (open drain) 30 - - v obsolete product(s) - obsolete product(s)
electrical characteristics std3nm60, std3nm60-1, stp4nm60 6/17 doc id 8370 rev 4 2.1 electrical characteri stics (curves) figure 2. safe operating area for to-220 figure 3. thermal impedance for to-220 figure 4. safe operating area for dpak and ipak figure 5. thermal impedance for dpak and ipak figure 6. output characterisics figure 7. transfer characteristics obsolete product(s) - obsolete product(s)
std3nm60, std3nm60-1, stp4nm60 electrical characteristics doc id 8370 rev 4 7/17 figure 8. transconductance figure 9. static drain-source on resistance figure 10. gate charge vs gate-source voltage figure 11. capacitance variations figure 12. normalized gate threshold voltage vs temperature figure 13. normalized on resistance vs temperature obsolete product(s) - obsolete product(s)
electrical characteristics std3nm60, std3nm60-1, stp4nm60 8/17 doc id 8370 rev 4 figure 14. source-drain diode forward characteristics obsolete product(s) - obsolete product(s)
std3nm60, std3nm60-1, stp4nm60 test circuits doc id 8370 rev 4 9/17 3 test circuits figure 15. switching times test circuit for resistive load figure 16. gate charge test circuit figure 17. test circuit for inductive load switching and diode recovery times figure 18. unclamped inductive load test circuit figure 19. unclamped inductive wavefo rm figure 20. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k ? 1k ? 47k ? 2.7k ? 1k ? 12v v i =20v=v gmax 2200 f p w i g =con s t 100 ? 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 ? a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s obsolete product(s) - obsolete product(s)
test circuits std3nm60, std3nm60-1, stp4nm60 10/17 doc id 8370 rev 4 figure 21. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd obsolete product(s) - obsolete product(s)
std3nm60, std3nm60-1, stp4nm60 package mechanical data doc id 8370 rev 4 11/17 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. obsolete product(s) - obsolete product(s)
package mechanical data std3nm60, std3nm60-1, stp4nm60 12/17 doc id 8370 rev 4 to-220 type a mechanical data dim mm min typ max a 4.40 4.60 b 0.61 0. 88 b 1 1.14 1.70 c0.4 8 0.70 d 15.25 15.75 d1 1.27 e10 10.40 e 2.40 2.70 e1 4. 9 5 5.15 f1.2 3 1. 3 2 h1 6.20 6.60 j1 2.40 2.72 l1 3 14 l1 3 .50 3 . 93 l20 16.40 l 3 02 8 . 9 0 ? p 3 .75 3 . 8 5 q 2.65 2. 9 5 0015988_rev_s eeee
std3nm60, std3nm60-1, stp4nm60 package mechanical data doc id 8370 rev 4 13/17 dim. mm. . x a m p y t . n i m 0 4 . 2 0 2 . 2 a 0 1 . 1 0 9 . 0 1 a 3 2 . 0 3 0 . 0 2 a 0 9 . 0 4 6 . 0 b 0 4 . 5 0 2 . 5 4 b 0 6 . 0 5 4 . 0 c 0 6 . 0 8 4 . 0 2 c 0 2 . 6 0 0 . 6 d 0 1 . 5 1 d 0 6 . 6 0 4 . 6 e 0 7 . 4 1 e 8 2 . 2 e 0 6 . 4 0 4 . 4 1 e 0 1 . 0 1 5 3 . 9 h 1 l 0 8 . 2 1 l 0 8 . 0 2 l 1 0 6 . 0 4 l 0 2 . 0 r v2 0 o 8 o to-252 (dpak) mechanical data 006 8 772_g obsolete product(s) - obsolete product(s)
package mechanical data std3nm60, std3nm60-1, stp4nm60 14/17 doc id 8370 rev 4 dim. mm. min. typ max. a 2.20 2.40 a1 0. 9 01.10 b 0.64 0. 9 0 b 2 0. 9 5 b 4 5.20 5.40 c 0.45 0.60 c2 0.4 8 0.60 d 6.00 6.20 e 6.40 6.60 e2.2 8 e1 4.40 4.60 h 16.10 l 9 .00 9 .40 (l1) 0. 8 01.20 l2 0. 8 0 v1 10 o to-251 (ipak) mechanical data 006 8 771_h obsolete product(s) - obsolete product(s)
std3nm60, std3nm60-1, stp4nm60 packaging mechanical data doc id 8370 rev 4 15/17 5 packaging mechanical data tape and reel shipment d 2 pak footprint dim. mm inch min. max. min. max. a 33 0 12.992 b 1.5 0.059 c12. 8 1 3 .2 0.504 0.520 d 20.2 0795 g 24.4 26.4 0.960 1.0 3 9 n 100 3 .9 3 7 t 3 0.4 1.197 ba s e qty bulk qty 1000 1000 reel mechanical data dim. mm inch min. max. min. max. a0 10.5 10.7 0.41 3 0.421 b0 15.7 15.9 0.61 8 0.626 d 1.5 1.6 0.059 0.06 3 d1 1.59 1.61 0.062 0.06 3 e1.651. 8 5 0.065 0.07 3 f 11.4 11.6 0.449 0.456 k0 4. 8 5.0 0.1 8 9 0.197 p0 3 .9 4.1 0.15 3 0.161 p1 11.9 12.1 0.46 8 0.476 p2 1.9 2.1 0.075 0.0 8 2 r 50 1.574 t0.250. 3 5 0.009 8 0.01 3 7 w 2 3 .7 24. 3 0.9 33 0.956 tape mechanical data obsolete product(s) - obsolete product(s)
revision history std3nm60, std3nm60-1, stp4nm60 16/17 doc id 8370 rev 4 6 revision history table 9. document revision history date revision changes 14-jan-2004 3 02-sep-2009 4 inserted v dss value @ t jmax = 150 c on cover page document reformatted to improve readability obsolete product(s) - obsolete product(s)
std3nm60, std3nm60-1, stp4nm60 doc id 8370 rev 4 17/17 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2009 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com obsolete product(s) - obsolete product(s)

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